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Evolution of silicon bulk lifetime during III-V-on-Si multijunction solar cell epitaxial growth

机译：III-V-on-Si多结太阳能电池外延生长过程中硅体寿命的演变

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The evolution of Si bulk minority carrier lifetime during the heteroepitaxial growth of III–V on Si multijunction solar cell structures via metal-organic chemical vapor deposition (MOCVD) has been analyzed. In particular, the impact on Si lifetime resulting from the four distinct phases within the overall MOCVD-based III–V/Si growth process were studied: (1) the Si homoepitaxial emitter/cap layer; (2) GaP heteroepitaxial nucleation; (3) bulk GaP film growth; and (4) thick GaAsyP1-y compositionally graded metamorphic buffer growth. During Phase 1 (Si homoepitaxy), an approximately two order of magnitude reduction in the Si minority carrier lifetime was observed, from about 450 to ≤1 µs. However, following the GaP nucleation (Phase 2) and thicker film (Phase 3) growths, the lifetime was found to increase by about an order of magnitude. The thick GaAsyP1-y graded buffer was then found to provide further recovery back to around the initial starting value. The most likely general mechanism behind the observed lifetime evolution is as follows: lifetime degradation during Si homoepitaxy because of the formation of thermally induced defects within the Si bulk, with subsequent lifetime recovery due to passivation by fast-diffusing atomic hydrogen coming from precursor pyrolysis, especially the group-V hydrides (PH3, AsH3), during the III–V growth. These results indicate that the MOCVD growth methodology used to create these target III–V/Si solar cell structures has a substantial and dynamic impact on the minority carrier lifetime within the Si substrate.
机译：通过金属有机化学气相沉积（MOCVD）分析了III-V在Si多结太阳能电池结构上异质外延生长过程中Si本体少数载流子寿命的演变。特别是，研究了整个基于MOCVD的III–V / Si生长过程中四个不同阶段对Si寿命的影响：（1）Si同质外延发射极/盖层； （2）GaP异质外延成核； （3）GaP薄膜生长； （4）厚的GaAsyP1-y组成渐变的变质缓冲液生长。在第1阶段（Si同质外延）期间，观察到Si少数载流子寿命降低了大约两个数量级，从大约450降低到≤1µs。但是，随着GaP成核（第2阶段）和较厚膜（第3阶段）的生长，发现寿命增加了大约一个数量级。然后发现厚的GaAsyP1-y梯度缓冲液可提供进一步的恢复，回到初始值附近。观察到的寿命演化背后的最可能的一般机理如下：由于在Si块体内形成了热诱导缺陷，导致Si均质外延期间的寿命退化，并且由于前驱体热解产生的快速扩散原子氢的钝化而导致随后的寿命恢复，在III–V增长期间，尤其是V族氢化物（PH3，AsH3）。这些结果表明，用于创建这些目标III–V / Si太阳能电池结构的MOCVD生长方法对Si衬底内的少数载流子寿命具有重大而动态的影响。

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